Evaluation of properties of Ta-Ni amorphous thin film for copper metallization in integrated circuits

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 430-434

  Fang, J S ^a   Hsu, T P ^a   Ker, M L ^a   Chen, H C ^a   Lee, J H ^a   Hsu, C S ^a   Yang, L C ^a  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

A. Amorphous materials; B. Plasma deposition; D. Diffusion; D. Electrical properties

Indexed keywords

ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS; METALLIZING; PLASMA DEPOSITION; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BARRIER FILMS; HIGH CRYSTALLIZATION TEMPERATURE; SPECIFIC ELEVATED TEMPERATURE;

AMORPHOUS MATERIALS;

EID: 38749121334     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.046     Document Type: Article

References (10)

1. Brotherton S.D., Ayres J.R., Gill A., van Kestern H.W., and Greidanus F.J.A.M. J. Appl. Phys. 662 (1987) 1826
2. Chiou J.C., Wang H.I., and Chen M.C. J. Electrochem. Soc. 143 (1996) 990
3. Burgess S.R., Donohue H., Buchanan K., Rimmer N., and Rich P. Microelectron. Eng. 64 (2002) 307
4. Hubner R., Hecker M., Mattern N., Hoffmann V., Wetzig K., Wenger Ch., Engelmann H.-J., Wenzel C., and Zschech E. Thin Solid Films 458 (2004) 237
5. Moshfegh A.Z., and Akhavan O. Mater. Sci. Semicond. Proc. 6 (2003) 165
6. Laurila T., Molarius J., and Kivilahti J.K. Microelectron. Eng. 71 (2004) 301
7. Fang J.S., Hsu T.P., and Chen G.S. J. Electron. Mater. 33 (2004) 1176
8. Fang J.S., Hsu T.P., and Chen H.C. J. Electron. Mater. 36 (2007) 614
9. Chen G.S., and Chen S.T. J. Appl. Phys. 87 (2000) 8473
10. Stavrev M., Fischer D., Wenzel C., Drescher K., and Mattern N. Thin Solid Films 307 (1997) 79