Synthesis and electrical characterization of tungsten oxide nanowires

Chinese Physics B

Volumn 18, Issue 7, 2009, Pages 3024-3030

  Rui, Huang ^a   Jing, Zhu ^a   Rong, Yu ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Chemical vapour deposition (CVD); Electrical characteriza tion, metal semiconductor metal (MSM) structure; Tungsten oxide nanowires

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; CHEMICAL VAPOUR DEPOSITION (CVD); ELECTRICAL CHARACTERIZA-TION, METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURE; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; I - V CURVE; IN-SITU TRANSMISSION; INTRINSIC PARAMETERS; METAL SEMICONDUCTOR METAL; OXYGEN CONCENTRATIONS; QUANTITATIVE ANALYSIS; TIN POWDER; TUNGSTEN OXIDE NANOWIRES; TUNGSTEN ROD;

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; ELECTRIC WIRE; IN SITU PROCESSING; METALS; NANOWIRES; OXIDES; OXYGEN; PHOTODETECTORS; SEMICONDUCTOR GROWTH; STRUCTURAL METALS; TIN; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; TUNGSTEN COMPOUNDS;

CHEMICAL VAPOR DEPOSITION;

EID: 68949184348     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/7/068     Document Type: Article

References (32)

1. Liao C. C Chen F R and Kai J J 2006 Sol. Energy Mater. Sol. Cells 90 1147
2. Turyan I Krasovec U. O Orel B Saraidorov T Reisfeld R and Mandler D 2000 Adv. Mater. 12 330
3. Solis J. L Saukko S Kish L Granqvist C G and Lantto V 2001 Thin Solid Films 391 255
4. Salje E K H and Eur J 1994 Solid State Inorg. Chem. 31 651
5. Aird A Domeneghetti M. C Mazzi F Tazzoli V and Salje E K H 1998 J. Phys.: Condens. Matter 10 L569
6. Seelaboyina R Huang J Park J Kang D H and Choil W B 2006 Nanotechnology 17 4840
7. Li Y B Bando Y and Golberg D 2003 Adv. Mater. 15 1294
8. Baek Y and Yong K 2007 J. Phys. Chem. C 111 1213
9. Polleux J Gurlo A Barsan N Weimar U Antonietti M and Niederberger M 2006 Angew. Chem. Int. Ed. 45 261
10. Thangala J Vaddiraju S Bogale R Thurman R Powers T Deb B and K Sunkara M 2007 Small 3 890
11. Xu F. S Tse S. D Al-Sharab J F and Kear B H 2006 Appl. Phys. Lett. 88 243115
12. Gu G Zheng B Han W Q Roth S and Liu J 2002 Nano. Lett. 2 849
13. Wang S. L He Y. H Zou J Cao P Jiang Y Huang B. Y Liu C T and Liaw P K 2007 J. Crystal Growth 303 574
14. Hong K. Q Xie M H and Wu H S 2006 Nanotechnology 17 4830
15. Hong K. Q Xie M. H Hu R and Wu H S 2008 Nanotechnology 19 085604
16. Zhang Z. Y Jin C. H Liang X. L Chen Q and Peng L M 2006 Appl. Phys. Lett. 88 73102
17. Zhang Y. J Wang N. L Gao S. P He R. R Miao S Liu J Zhu J and Zhang X 2002 Chem. Mater. 14 3564
18. Lee Y. H Yoo J. M Park D. H Kim D H and Ju B K 2005 Appl. Phys. Lett. 86 033110
19. Cui Y Duan X. F Hu J T and Lieber C M 2000 J. Phys. Chem. B 104 5213
20. Lao C. S Liu J Gao P. X Zhang L. Y Davidovic D Tummala R and Wang Z L 2006 Nano. Lett. 6 263
21. Heo Y. W Tien L. C Norton D. P Pearton S. J Kang B. S Ren F and LaRoche J R 2004 Appl. Phys. Lett. 85 3107
22. Fan Z Y and Lu J G 2005 Appl. Phys. Lett. 86 032111
23. Tang W. H Fu X. L Zhang Z Y and Li L H 2006 Chin. Phys. 15 0773
24. Wang D. Q Zhou Z. Y Zhu R and Ye X Y 2008 Chin. Phys. B 17 3875
25. Luo J Xing Y. J Zhu J Yu D. P Zhao Y. G Zhang L Fang H Huang Z P and Xu J 2006 Adv. Funct. Mater. 16 1081
26. Luo J Zhu J Huang Z P and Zhang L 2007 Appl. Phys. Lett. 90 033114
27. Liu Y Zhang Z. Y Hu Y F Jin C H and Peng L M 2008 J. Nanosci. Nanotechnol. 8 252
28. Long Y. Z Wang W. L Bai F. L Chen Z. J Jin Ai Z and Gu C Z 2008 Chin. Phys. B 17 1389
29. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contact (Oxford: Oxford University Press) p 96, 128
30. Padovani F A and Stratton R 1966 Solid-State Electronics 9 695
31. Polaczekt A Pqkatai M and Obuszkot Z 1994 J. Phys.: Condens. Matter 6 7909
32. Deb S K 1973 Phil. Mag. 27 801