Threshold switching in Te46-xAs32+xGe10Si12 chalcogenide glass system

Vacuum

Volumn 48, Issue 2, 1997, Pages 135-141

  Afifi, M A ^a   Hegab, N A ^a  

^a Roxy   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; OPTICAL FILMS; OPTICAL SWITCHES; SEMICONDUCTING TELLURIUM COMPOUNDS; THERMAL EFFECTS; THIN FILMS;

CHALCOGENIDE GLASS; ELECTROTHERMAL BREAKDOWN;

OPTICAL GLASS;

EID: 0031072525     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(96)00242-4     Document Type: Article

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