A novel ruthenium precursor for MOCVD without seed ruthenium layer

Materials Research Society Symposium - Proceedings

Volumn 748, Issue , 2003, Pages 111-116

  Shibutami, Tetsuo ^a   Kawano, Kazuhisa ^a   Oshima, Noriaki ^a   Yokoyama, Shintaro ^b   Funakubo, Hiroshi ^b  

^a TOSOH CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; RUTHENIUM; THERMAL EFFECTS;

RUTHENIUM LAYERS;

THIN FILMS;

EID: 0038037161     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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