Properties of Ru/HfxSi1-xOy/Si metal oxide semiconductor gate stack structures grown by atomic vapor deposition

Journal of the Electrochemical Society

Volumn 153, Issue 8, 2006, Pages

  Frohlich K ^a   Luptak R ^a   Husekova K ^a   Cico, K ^a   Tapajna, M ^a,b   Weber, U ^c   Baumann, P K ^c   Lindner, J ^c   Espinos J P ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c AIXTRON AG   (Germany)

^d INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GAS HEATING; MOS DEVICES; RUTHENIUM COMPOUNDS; VAPOR DEPOSITION;

GAS ANNEALING; METAL OXIDE SEMICONDUCTOR GATE STACK; OXIDE FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33745500833     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2209560     Document Type: Article

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