Fermi level pinning and effects on CuInGaSe2-based thin-film solar cells

Semiconductor Science and Technology

Volumn 24, Issue 5, 2009, Pages

  Dharmadasa, I M ^a  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CDS/CDTE SOLAR CELLS; CIGS SOLAR CELLS; COPPER INDIUM GALLIUM DISELENIDE; CUINGASE; DEFECT LEVELS; DISCRETE VALUES; ELECTRICAL CONTACTS; FERMI LEVEL PINNING; FURTHER DEVELOPMENT; NEW CONCEPT; SOLID-STATE PHYSICS; THIN-FILM SOLAR CELLS; VALENCE BAND EDGES;

FERMI LEVEL; FERMIONS; GALLIUM; PHOTOVOLTAIC CELLS; SELENIUM COMPOUNDS; SOLAR CELLS; THIN FILM DEVICES;

CELL MEMBRANES;

EID: 68949116198     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/5/055016     Document Type: Article

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