Properties of Cu(In,Ga)Sc2 Thin Films Prepared by Chemical Spray Pyrolysis

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 4997-5002

  Shirakata, Sho ^a   Kannaka, Yoshiaki ^b   Hasegawa, Harufumi ^a   Kariya, Tetsuya ^b   Isomura, Shigehiro ^a  

^a EHIME UNIVERSITY   (Japan)

^b Faculty of Science   (Japan)

Author keywords

Chemical spray pyrolysis; Copper indium diselenide; Cu(ln,ga)se2; Raman spectroscopy; Thin polycrystaliline film

Indexed keywords

COMPOSITION EFFECTS; ENERGY GAP; FILM GROWTH; HIGH TEMPERATURE EFFECTS; LATTICE CONSTANTS; PHONONS; POLYCRYSTALLINE MATERIALS; PYROLYSIS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPRAYING; THIN FILMS;

CHEMICAL SPRAY PYROLYSIS (CSP); COPPER INDIUM DISELENIDE;

SEMICONDUCTING FILMS;

EID: 0033317767     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4997     Document Type: Article

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