Development of p+, p, i, n, and n+ -type CuInGa Se2 layers for applications in graded bandgap multilayer thin-film solar cells

Journal of the Electrochemical Society

Volumn 154, Issue 6, 2007, Pages

  Dharmadasa, I M ^a   Chaure, N B ^a   Tolan, G J ^a   Samantilleke, A P ^a  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; ENERGY GAP; PHOTOELECTROCHEMICAL CELLS; SOLAR CELLS; THIN FILM DEVICES; X RAY DIFFRACTION;

DEVICE PARAMETERS; MATERIAL LAYERS; MULTILAYER THIN FILM SOLAR CELLS;

COPPER COMPOUNDS;

EID: 34547172346     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2718401     Document Type: Article

References (12)

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