Formation of an interfacial MoSe2 layer in CVD grown CuGaSe2 based thin film solar cells

Thin Solid Films

Volumn 431-432, Issue , 2003, Pages 398-402

  Wurz R ^a   Fuertes Marron D ^a   Meeder, A ^a   Rumberg, A ^a   Babu, S M ^a   Schedel Niedrig, Th ^a   Bloeck, U ^a   Schubert Bischoff, P ^a   Lux Steiner, M Ch ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

CuGaSe2; CVD; MoSe2; Thin film solar cells

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER COMPOUNDS; HETEROJUNCTIONS; MORPHOLOGY; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACIAL LAYERS;

THIN FILMS;

EID: 4243406546     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00261-X     Document Type: Conference Paper

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