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Journal of Electronic Materials

Volumn 38, Issue 8, 2009, Pages 1539-1547

Ab initio studies of hydrogen defects in cdte

(3) Rak, Zs a Mahanti, S D a Mandal, Krishna C b

a MICHIGAN STATE UNIVERSITY (United States)

b EIC LABORATORIES INC (United States)

Author keywords

Defect formation energy; DFT; Electronic structure; Hydrogen in CdTe

Indexed keywords

AB INITIO STUDY; AMPHOTERIC IMPURITIES; BOND CENTERS; CDTE; CHARGE STATE; DEFECT FORMATION ENERGY; DFT; ENERGY POSITION; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; FREE HOLES; HYDROGEN DEFECTS; INTERSTITIAL SITES; NEAREST NEIGHBORS; P-TYPE; POSITIVE CHARGES;

CADMIUM COMPOUNDS; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HYDROGEN; PROBABILITY DENSITY FUNCTION;

CADMIUM ALLOYS;

EID: 68749106910 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0751-1 Document Type: Conference Paper

Times cited : (14)

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