Experimental electron mobility in ZnO: A reassessment through monte carlo simulation

Journal of Electronic Materials

Volumn 38, Issue 8, 2009, Pages 1677-1683

  Bertazzi, Francesco ^a,b   Bellotti, Enrico ^a   Furno, Enrico ^b   Goano, Michele ^a  

^a BOSTON UNIVERSITY   (United States)

^b POLITECNICO DI TORINO   (Italy)

Author keywords

Dislocation scattering; Hall factor; Hall mobility; Monte Carlo simulation; ZnO

Indexed keywords

ANALYTICAL EXPRESSIONS; DEFORMATION POTENTIAL; DIRECT SIMULATION; DISLOCATION SCATTERING; EXPERIMENTAL STUDIES; FIRST-PRINCIPLES; HALL FACTOR; HALL MEASUREMENTS; LOW TEMPERATURES; MONTE CARLO; MONTE CARLO SIMULATION; OPTICAL PHONON SCATTERING; OPTICAL PHONONS; SCATTERING MECHANISMS; TEMPERATURE DEPENDENT; TRANSPORT MODELS; ZNO;

COMPUTER SIMULATION LANGUAGES; ELECTRON MOBILITY; HALL MOBILITY; INTEGRATED OPTOELECTRONICS; LIGHT TRANSMISSION; MONTE CARLO METHODS; PHONONS; SCATTERING; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; ZINC OXIDE;

GALVANOMAGNETIC EFFECTS;

EID: 68749101987     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0809-0     Document Type: Conference Paper

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