Characteristics of RTE SF6/O2/Ar plasmas on n-silicon etching

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2006, Pages 851-855

  Rosli, Siti Azlina ^a   Aziz, Azlan Abdul ^a   Hamid, Haslinda Abdul ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; CHEMICAL REACTORS; PLASMA ETCHING; REACTIVE ION ETCHING; SILICON; SULFUR COMPOUNDS; SURFACE MORPHOLOGY;

ETCH RATES; SULPHUR TETRA FLUORIDES;

PLASMAS;

EID: 35148858912     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2006.380758     Document Type: Conference Paper

References (9)

1. K. E. Peterson, Proc IEEE; 70, 420, (1982).
2. L. Crepregi Microelectron Eng; 3, 221, (1985).
3. L. M. Ephrath, IEEE Trans Electron Devices; ED 28, 1319, (1981).
4. H. F. Winters J. Appl. Phys. 49 5165. (1978)
5. R. Legtenberg, H. Jansen, M. Deboer and M. Elwnspoek, Journal of Electrochemical Society, 142, 6, (1995)
6. A. K Paul, A. K Dimri, S. Mohan, Proc SPIE; 3903, 2, (1999).
7. S. Tachi, K. Tsujimoto, S. Arai, T. Kure J Vac Sci Technol; A9, 796. (1991).
8. G. C. Schwartz and P. M. Schaible, J. Vac. Sci. Technol. 16, 410 (1979)
9. Patrick Veradonck, http://www.ccs.unicamp.br/cursos/fee107/download/ cap10.pdf