Direct growth of bent carbon nanotubes on surface engineered sapphire

Journal of Physical Chemistry C

Volumn 113, Issue 30, 2009, Pages 13121-13124

  Ago, Hiroki ^a,b   Imamoto, Kenta ^a   Nishi, Tetsushi ^a   Masaharu Tsuji, ^a   Ikuta, Tatsuya ^a   Takahashi, Koji ^a   Fukui, Munetoshi ^c  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c HITACHI HIGH TECHNOLOGIES CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED SINGLE-WALLED CARBON NANOTUBES; BENDING ANGLE; BENDING STRUCTURES; DIRECT GROWTH; NANOTUBE GROWTH; ORIENTED GROWTH; PLANE SAPPHIRE; SINGLE-CRYSTAL; STEP STRUCTURE; SWNT GROWTH; TEMPLATED GROWTH;

CORUNDUM; ELECTRON TRANSPORT PROPERTIES; SAPPHIRE; SINGLE CRYSTALS; SINGLE-WALLED CARBON NANOTUBES (SWCN); TRANSPORT PROPERTIES;

CARBON NANOTUBES;

EID: 68349085695     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp902409w     Document Type: Article

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