Top-down approach to align single-walled carbon nanotubes on silicon substrate

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Orofeo, Carlo M ^a   Ago, Hiroki ^a,b   Yoshihara, Naoki ^a   Tsuji, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; NANOCOMPOSITES; NANOTUBES; REACTIVE ION ETCHING; SINGLE-WALLED CARBON NANOTUBES (SWCN); SUBSTRATES; TRANSISTORS;

ALIGNMENT MECHANISMS; EXPERIMENTAL OBSERVATIONS; HORIZONTAL ALIGNMENTS; MASS PRODUCTIONS; ON/OFF RATIOS; REACTIVE IONS; SI SUBSTRATES; SILICON SUBSTRATES; SINGLE-WALLED CARBONS; TOP-DOWN APPROACHES;

CARBON NANOTUBES;

EID: 59849114284     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3078280     Document Type: Article

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