Mechanism of horizontally aligned growth of single-wall carbon nanotubes on R-plane sapphire

Journal of Physical Chemistry B

Volumn 110, Issue 45, 2006, Pages 22676-22680

  Yu, Qingkai ^a   Qin, Guoting ^b   Li, Hao ^c   Xia, Zhenhai ^d   Nian, Yibo ^a   Pei, Shin Shem ^a  

^a University of Houston   (United States)

^b University of Houston   (United States)

^c University of Missouri   (United States)

^d The University of Akron   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; SAPPHIRE; SUBSTRATES; SYNTHESIS (CHEMICAL);

SAPPHIRE SUBSTRATES; SAPPHIRE WAFERS; SINGLE-WALL CARBON NANOTUBES (SWNT);

CARBON NANOTUBES;

EID: 33751242002     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp064875x     Document Type: Article

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