Band gap tuning of InAs/GaSb type-II superlattices for mid-infrared detection

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2580-2585

  Haugan, H J ^a   Szmulowicz, F ^a   Brown, G J ^a   Mahalingam, K ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN PARAMETERS; ENVELOPE FUNCTION APPROXIMATION (EFA); INFRARED DETECTION; PHOTORESPONSE CUTOFF;

APPROXIMATION THEORY; BANDWIDTH; ENERGY GAP; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PERTURBATION TECHNIQUES; QUANTUM EFFICIENCY; REDUCTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

SUPERLATTICES;

EID: 4944251293     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1776321     Document Type: Article

References (9)

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