Exploring optimum growth for high quality InAs/GaSb type-II superlattices

Journal of Crystal Growth

Volumn 261, Issue 4, 2004, Pages 471-478

  Haugan, H J ^a   Grazulis, L ^a   Brown, G J ^a   Mahalingam, K ^a   Tomich, D H ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A3. Molecular beam epitaxy; A3. Superlattices; B1. Antimonides; B3. Infrared detector

Indexed keywords

DEGRADATION; INFRARED DETECTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE MISMATCH; STRAIN BALANCING PROCESS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0347599289     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.045     Document Type: Article

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