Electroluminescence of InAs-GaSb heterodiodes

IEEE Journal of Quantum Electronics

Volumn 42, Issue 2, 2006, Pages 126-130

  Hoffman, Darin ^a   Hood, Andrew ^a   Michel, Erick ^a   Fuchs, Frank ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

Electroluminescence; Heterodiode; InAs GaSb; Semiconductor device radiation effects; Type II superlattices

Indexed keywords

ACTIVATION ENERGY; BERYLLIUM; DOPING (ADDITIVES); ELECTROLUMINESCENCE; RADIATION EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

HETERODIODES; INJECTION CURRENT; LONG WAVELENGTH INFRARED SUPERLATTICE; SEMICONDUCTOR DEVICE RADIATION EFFECTS;

SEMICONDUCTOR DIODES;

EID: 30744443276     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.861621     Document Type: Article

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