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Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

Low energy Ar+ sputtering-induced GaAs quantum dot formation and evolution

(5) Wang, Y a Yoon, S F a Ngo, C Y a Tong, C Z a Liu, C Y a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; DOT HEIGHT; DOT SIZE; DOT UNIFORMITY; ENERGY DOMAIN; GAAS; GAAS/ALGAAS; ION ENERGIES; ION SPUTTERING; LOW-ENERGY AR; NONRADIATIVE DEFECTS; PHOTOLUMINESCENCE SIGNALS; POSTGROWTH ANNEALING; POWER LAW MODEL; QUANTUM DOT; SIZE SCALE; SPUTTERING TIME; SURFACE PATTERN; TEMPORAL EVOLUTION; THEORETICAL PREDICTION; THERMAL-ANNEALING;

ANNEALING; CRYSTAL GROWTH; GALLIUM ALLOYS; IONS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MORPHOLOGY; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SPUTTERING; SURFACE MORPHOLOGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 68249150857 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3172928 Document Type: Article

Times cited : (14)

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