Temperature and excitation density dependent photoluminescence of sputtering-induced GaAs/AlGaAs quantum dots

Nanotechnology

Volumn 19, Issue 1, 2008, Pages

  Wang, Y ^a   Yoon, S F ^a   Liu, C Y ^a   Ngo, C Y ^a   Ahn, J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; EXCITATION ENERGY; ION BEAMS; PHOTOLUMINESCENCE; SPUTTERING;

EXCITATION DENSITY; NONRADIATIVE RECOMBINATION; QUANTUM BOX;

SEMICONDUCTOR QUANTUM DOTS;

NANOMATERIAL; QUANTUM DOT;

ARTICLE; ATOMIC FORCE MICROSCOPY; DENSITY; ENERGY; HIGH TEMPERATURE; MOLECULAR DYNAMICS; PHOTOCHEMICAL QUENCHING; PHOTOLUMINESCENCE; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE;

EID: 36749081735     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/01/015602     Document Type: Article

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