Dopant-segregated schottky silicon-nanowire MOSFETs with gate-all-around channels

IEEE Electron Device Letters

Volumn 30, Issue 8, 2009, Pages 843-845

  Chin, Yoke King ^a,b   Pey, Kin Leong ^a   Singh, Navab ^b   Lo, Guo Qiang ^b   Tan, Khing Hong ^a   Ong, Chio Yin ^a   Tan, L H ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Dopant segregation (DS); Gate all around (GAA); Schottky barrier (SB) MOSFET; Silicon nanowire (SiNW)

Indexed keywords

DOPANT SEGREGATION; DOPANT SEGREGATION (DS); GATE LENGTH; GATE OXIDE; GATE-ALL-AROUND; GATE-ALL-AROUND (GAA); HOLE INJECTION; PMOSFET; SCHOTTKY; SCHOTTKY BARRIER (SB) MOSFET; SCHOTTKY BARRIERS; SERIES RESISTANCES; SHORT-CHANNEL PERFORMANCE; SILICON NANOWIRE (SINW); SILICON NANOWIRES; SUBTHRESHOLD SLOPE;

DIELECTRIC RELAXATION; ELECTRON INJECTION; GALLIUM ALLOYS; MOSFET DEVICES; NANOWIRES; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 68249143299     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2022851     Document Type: Article

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