Characterization of polycrystalline silicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 A, 2006, Pages 1534-1539

  Sameshima, Toshiyuki ^a   Kimura, Mutsumi ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b RYUKOKU UNIVERSITY   (Japan)

Author keywords

Defect states; Fermi level; TFTs; Transconductance

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLIZATION; FERMI LEVEL; POLYSILICON; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DEFECT STATES; ELECTRON CARRIERS; LASER CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 33644929741     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.1534     Document Type: Article

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