ZnO transparent thin-film transistors with HfO2/Ta 2O5 stacking gate dielectrics

Electronics Letters

Volumn 44, Issue 3, 2008, Pages 186-187

  Chen, H J H ^a   Yeh, B B L ^a   Pan, H C ^b   Chen, J S ^b  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^b INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM COMPOUNDS; TANTALUM COMPOUNDS; ZINC OXIDE;

FIELD EFFECT MOBILITY; SUBTHRESHOLD SLOPE; TRANSISTOR BEHAVIOR;

THIN FILM TRANSISTORS;

EID: 38849200992     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083215     Document Type: Article

References (5)

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