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Volumn 19, Issue 8, 2002, Pages 1172-1175

Polarization-induced charges in modulation-doped AlxGa1-xN/GaN heterostructures through capacitance-voltage profiling

(10) Zhou, Yu Gang a Shen, Bo a Yu, Hui Qiang a Liu, Jie a Zhou, Hui Mei a Zhang, Rong a Shi, Yi a Zheng, You Dou a Someya, T b Arakawa, Y b

a NANJING UNIVERSITY (China)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; III-V SEMICONDUCTORS; MODULATION; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR ALLOYS;

% REDUCTIONS; CAPACITANCE-VOLTAGE METHOD; CAPACITANCE-VOLTAGE PROFILES; CAPACITANCE-VOLTAGE PROFILING; HETERO-INTERFACES; MODULATION-DOPED; POLARIZATION FIELD; POLARIZATION INDUCED CHARGES; SCHOTTKY DIODES; SHEET DENSITY;

CAPACITANCE;

EID: 0036678391 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/19/8/343 Document Type: Article

Times cited : (8)

References (18)

1
- 0842277372
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1214
- Khan, M.A.¹ Bhattarai, A.² Kuznia, J.N.³ Olson, D.T.⁴

2
- 0032002237
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 44
- Chen, Q.¹ Wang, J.W.² Gaska, R.³ Khan, M.A.⁴ Shur, M.S.⁵ Sullivan, G.J.⁶ Sailor, A.L.⁷ Higgings, J.A.⁸ Ping, A.T.⁹ Asesida, I.¹⁰

3
- 0032098517
- (1998) IEEE Trans. Microwave Theory Tech. , vol.46 , Issue.6 , pp. 756
- Mishra, U.K.¹ Uw, Y.F.² Keller, B.P.³ Keller, S.⁴ Denbaars, S.P.⁵

4
- 0642275027
- (1997) Phys. Rev. B , vol.56
- Bernardini, F.¹ Fiorentini, V.²

5
- 0031551223
- (1998) Electron. Lett. , vol.33 , pp. 1230
- Asbeek, P.M.¹ Yu, E.T.² Lau, S.S.³ Sullivan, G.J.⁴ Hove, J.V.⁵ Redwing, J.⁶

6
- 0031268156
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2794
- Yu, E.T.¹ Sullivan, G.J.² Asbeck, P.M.³ Wang, C.D.⁴ Qiao, D.⁵ Lau, S.S.⁶

7
- 0000579403
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1856
- Maeda, N.¹ Nishida, T.² Kobayashi, N.³ Tomizawa, M.⁴

8
- 0000606217
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2746
- Shen, B.¹ Someya, T.² Arakawa, Y.³

9
- 0001590229
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Weimann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Dimitrov, R.⁷ Wittmer, L.⁸ Stutzmann, M.⁹ Rieger, W.¹⁰ Hilsenbeck, J.¹¹

10
- 0142038457
- (2000) J. Appl. Phys. , vol.87 , pp. 334
- Ambacher, O.¹ Foutz, B.² Smart, J.³ Shealy, J.R.⁴ Weimann, N.G.⁵ Chu, K.⁶ Murphy, M.⁷ Sierak, A.J.⁸ Schaff, W.J.⁹ Eastman, L.F.¹⁰

11
- 0000804158
- (1999) J. Appl. Phys. , vol.86 , pp. 4520
- Smorchkova, I.P.¹ Elsass, C.R.² Ibbetson, J.R.³ Vetury, R.⁴ Heying, B.⁵ Fine, P.⁶ Haus, E.⁷ Denbarrs, S.P.⁸ Speck, J.S.⁹ Mishra, U.K.¹⁰

12
- 23044524861
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 2322
- Zhang, Y.F.¹ Smorchkova, Y.² Elsass, C.³ Keller, S.⁴ Ibbetson, J.⁵ DenBaars, S.⁶ Singh, J.⁷

13
- 0002165482
- (1980) Appl. Phys. Lett. , vol.38 , pp. 395
- Kroemer, H.¹ Chien, W.Y.² Harris, J.S.³ Edwall, D.D.⁴

14
- 21544432312
- (1985) Appl. Phys. Lett. , vol.46 , pp. 504
- Kroemer, H.¹

15
- 0022520568
- (1986) IEEE Trans. Electron. Devices , vol.33 , pp. 154
- Yoshida, J.¹

16
- 0000196038
- (1997) Solid-State Electron. , vol.38 , pp. 1197
- Ogawa, M.¹ Matsubayashi, H.² Ohta, H.³ Miyoshi, T.⁴

17
- 0030127795
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2541
- Martin, G.¹ Botchkarev, A.² Rockett, A.³ Morkoc, H.⁴

18
- 0035578983
- (2001) Chin. Phys. Lett. , vol.18 , pp. 129
- Shen, B.¹ Zhang, R.² Shi, Y.³ Zheng, Y.D.⁴ Someya, T.⁵ Arakawa, Y.⁶

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