Investigation of the polarization-induced charges in modulation-doped AlxGa1-xN/GaN heterostructures through capacitance-voltage profiling and simulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2531-2535

  Zhou, Yu Gang ^a   Shen, Bo ^a   Someya, Takao ^b   Yu, Hui Qiang ^a   Liu, Jie ^a   Zhou, Hui Mei ^a   Zhang, Rong ^a   Shi, Yi ^a   Zheng, You Dou ^a   Arakawa, Yasuhiko ^b  

^a NANJING UNIVERSITY   (China)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

AlxGa1 xN GaN hetereostructures; Capacitance voltage; Numerical simulation; Piezoelectric polarization; Spontaneous polarization

Indexed keywords

COMPUTER SIMULATION; PIEZOELECTRIC MATERIALS; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

PIEZOELECTRIC POLARIZATION; POLARIZATION-INDUCED CHARGES; SPONTANEOUS POLARIZATION;

HETEROJUNCTIONS;

EID: 4944222383     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2531     Document Type: Article

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