Polarization charge densities at p-GaN/n-AlGaN heterojunctions evaluated by capacitance-voltage characteristics

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 334-337

  Makimoto, T ^a   Kumakura, K ^a   Kobayashi, N ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CHARGE DENSITY; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; NITRIDES; POLARIZATION; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DIODES; WIDE BAND GAP SEMICONDUCTORS;

AL MOLE FRACTIONS; BACKGROUND IMPURITIES; CAPACITANCE VOLTAGE CHARACTERISTIC; HETERO INTERFACES; HETEROJUNCTION DIODES; NEGATIVE POLARIZATION; P-N HETEROJUNCTIONS; POLARIZATION CHARGE DENSITIES;

CAPACITANCE;

EID: 67650718088     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390056     Document Type: Conference Paper

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