Modeling the gate bias dependence of contact resistance in staggered polycrystalline organic thin film transistors

Organic Electronics

Volumn 10, Issue 6, 2009, Pages 1074-1081

  Vinciguerra, Vincenzo ^a   Rosa, Manuela La ^a   Nicolosi, Donata ^a   Sicurella, Giovanni ^a   Occhipinti, Luigi ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

Contact resistance; Organic thin film transistor; Polycrystalline organic semiconductors; Poole Frenkel; Printed electronics; Staggered OTFT

Indexed keywords

CHARGE INJECTION; CHEMICAL SENSORS; CONTACT RESISTANCE; ELECTRIC FIELDS; ELECTRODES; ENERGY BARRIERS; FIELD EFFECT TRANSISTORS; GRAIN BOUNDARIES; PHOTOTRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR METAL BOUNDARIES; THIN FILM CIRCUITS; THIN FILMS;

ORGANIC THIN FILM TRANSISTORS; POLYCRYSTALLINE; POOLE-FRENKEL; PRINTED ELECTRONICS; STAGGERED OTFT;

THIN FILM TRANSISTORS;

EID: 67650732104     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2009.05.019     Document Type: Article

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