Resistivity and lifetime variation along commercially grown Ga- and B-doped czochralski Si ingots and its effect on light-induced degradation and performance of solar cells

Progress in Photovoltaics: Research and Applications

Volumn 14, Issue 2, 2006, Pages 125-134

  Meemongkolkiat, V ^a   Nakayashiki, K ^a   Rohatgi, A ^a   Crabtree, G ^b   Nickerson, J ^b   Jester, T L ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Shell Solar Industries LP   (United States)

Author keywords

Czochralski silicon; Dopant; Light induced degradation

Indexed keywords

DEGRADATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM; SOLAR CELLS;

CZOCHRALSKI SILICON; DOPANT; LIGHT-INDUCED DEGRADATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33644895665     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.659     Document Type: Article

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