Evolution of flow pattern defects in boron-doped 〈1 0 0〉 Czochralski silicon crystals during secco etching procedure

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 310-316

  Zhang, Jianfeng ^a   Liu, Caichi ^a   Zhou, Qigang ^b   Wang, Jing ^b   Hao, Qiuyan ^a   Zhang, Hongdi ^a   Li, Yangxian ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

A1. Atomic force microscopy; A1. Flow pattern defects; A1. Grown in defects; A1. Microstructure; B1. Cz Si

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ETCHING; FLOW PATTERNS; OPTICAL MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TEXTURES;

CZOCHRALSKI SILICON CRYSTALS; FLOW PATTERN DEFECTS; GROWN-IN DEFECTS; SECCO ETCHING;

SEMICONDUCTING BORON;

EID: 4344696678     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.095     Document Type: Article

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