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Volumn 106, Issue 1, 2009, Pages

Modification of electronic states of √3×√3-Ag structure by strained Ge/Si(111) substrate

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED ULTRAVIOLET PHOTOELECTRON SPECTROSCOPIES; BAND DISPERSIONS; COMPRESSIVE STRAIN; INTERATOMIC SPACING; LATTICE STRAIN; MAXIMUM VALUES; METALLIC STATE; SI(111) SUBSTRATE; SURFACE PLANES;

EID: 67650708851     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159017     Document Type: Article
Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.