Mitigation techniques for single-event-induced charge sharing in a 90-nm bulk CMOS process

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 311-317

  Amusan, Oluwole A ^a   Massengill, Lloyd W ^a   Baze, Mark P ^b   Bhuva, Bharat L ^a   Witulski, Arthur F ^a   Black, Jeffrey D ^a   Balasubramanian, Anupama ^a   Casey, Megan C ^a   Black, Dolores A ^a   Ahlbin, Jonathan R ^a   Reed, Robert A ^a   McCurdy, Michael W ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b BOEING COMPANY   (United States)

Author keywords

Charge sharing; Dual interlocked cell (DICE) latch; Guard rings; Heavy ion; Nodal spacing; Single event (SE) circuit characterization; Soft error cross section

Indexed keywords

CHARGE SHARING; DUAL-INTERLOCKED-CELL (DICE) LATCH; GUARD-RINGS; NODAL SPACING; SINGLE-EVENT (SE) CIRCUIT CHARACTERIZATION; SOFT-ERROR CROSS SECTION;

HEAVY IONS; SPONTANEOUS EMISSION;

CELL MEMBRANES;

EID: 67650330604     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2019963     Document Type: Article

References (14)

1. R. Velazco, T. Calin, M. Nicolaidis, S. C. Moss, S. D. LaLumondiere, V. T. Tran, and R. Koga, "SEU-hardened storage cell validation using a pulsed laser," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2843-2848, Dec. 1996.
2. B. D. Olson, D. R. Ball, K. M. Warren, L. W. Massengill, N. F. Haddad, S. E. Doyle, and D. McMorrow, "Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2132-2136, Dec. 2005.
3. J. D. Black, A. L. Sternberg, M. L. Alles, A. F. Witulski, B. L. Bhuva, L. W. Massengill, J. M. Benedetto, M. P. Baze, J. L. Wert, and M. G. Hubert, "HBD layout isolation techniques for multiple node charge collection mitigation," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2536-2541, Dec. 2005.
4. O. A. Amusan, A. L. Sternberg, A. F. Witulski, B. L. Bhuva, J. D. Black, M. P. Baze, and L. W. Massengill, "Single event upsets in a 130 nm hardened latch design due to charge sharing," in Proc. 45th Int. Rel. Phys. Symp., Phoenix, AZ, 2007, pp. 306-311.
5. W. Peterson, Error-Correcting Codes, 2nd ed. Cambridge, MA: MIT Press, 1980. 560p.
6. D. G. Mavis and P. H. Eaton, "Temporally redundant latch for preventing single event disruptions in sequential integrated circuits," U.S. Patent 6 127 864, Oct. 3, 2000.
7. T. Calin, M. Nicolaidis, and R. Velazco, "Upset hardened memory design for submicron CMOS technology," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2874-2878, Dec. 1996.
8. O. A. Amusan, L. W. Massengill, M. P. Baze, B. L. Bhuva, A. F. Witulski, S. DasGupta, A. L. Sternberg, P. R. Fleming, C. C. Heath, and M. L. Alles, "Directional effects on single event charge sharing in a 90 nm CMOS latch," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2584-2589, Dec. 2007.
9. O. A. Amusan, A. F. Witulski, L. W. Massengill, B. L. Bhuva, P. R. Fleming, M. L. Alles, A. L. Sternberg, J. D. Black, and R. D. Schrimpf, "Charge collection and charge sharing in a 130 nm CMOS technology," IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3253-3258, Dec. 2006.
10. B. D. Olson, O. A. Amusan, S. Dasgupta, L. W. Massengill, A. F. Witulski, B. L. Bhuva, M. L. Alles, K. M. Warren, and D. R. Ball, "Analysis of parasitic bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 894- 897, Aug. 2007.
11. R. C. Baumann, "Radiation-induced soft errors in advanced semiconductor technologies," IEEE Trans. Device Mater. Rel., vol. 5, no. 3, pp. 305-316, Sep. 2005.
12. P. Hazucha, T. Karnik, S. Walstra, B. A. Bloechel, J. W. Tschanz, J. Maiz, K. Soumyanath, G. E. Dermer, S. Narendra, V. De, and S. Borkar, "Measurements and analysis of SER-tolerant latch in a 90-nm Dual-Vt CMOS process," IEEE J. Solid-State Circuits, vol. 39, no. 9, pp. 1536- 1543, Sep. 2004.
13. O. A. Amusan, L. W. Massengill, B. L. Bhuva, A. F. Witulski, and M. P. Baze, "Angular effects of charge sharing in a 90 nm CMOS technology," presented at the Single Event Effects (SEE) Symp., Long Beach, CA, Apr. 2007.
14. M. P. Baze, B. Hughlock, J. Wert, J. Tostenrude, L. W. Massengill, O. A. Amusan, R. Lacoe, K. Lilja, and M. Johnson, "Angular dependence of single event sensitivity in hardened flip/flop," presented at the Nuclear and Space Radiation Effects Conf., Tucson, AZ, 2008.