Organic modified Schottky contacts: Barrier height engineering and chemical stability

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 879-882

  Kampen, T U ^a   Park, S ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTRONIC PROPERTIES; FERMI LEVEL; OXYGEN; SEMICONDUCTING GALLIUM COMPOUNDS;

ORGANIC MODIFIED SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0037279337     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1562636     Document Type: Article

References (13)

1. S. F. Forrest, Chem. Rev. 97, 1793 (1997).
2. I. G. Hill, A. Kahn, Z. G. Soos, and R. A. Pascal, Jr., Chem. Phys. Lett. 327, 181 (2000).
3. S. R. Forrest, M. L. Kaplan, P. H. Schmidt, and J. M. Parsey, Jr., J. Appl. Phys. 58, 867 (1985).
4. S. R. Forrest, M. L. Kaplan, and P. H. Schmidt, J. Appl. Phys. 55, 1492 (1984).
5. T. U. Kampen, S. Park, and D. R. T. Zahn, Appl. Surf. Sci. 190, 461 (2002).
6. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988).
7. T. Akatsu, A. Plößl, H. Stenzel, and U. Gösele, Appl. Phys. Lett. 86, 7146 (1999).
8. K. A. Elamrawi and H. E. Elsayed, J. Vac. Sci. Technol. A 17, 823 (1999).
9. M. Yamada and Y. Die, Jpn. J. Appl. Phys., Part 2 33, L.671 (1994).
10. N. Newman, W. E. Spicer, T. Kendelewicz, and I. Lindau, J. Vac. Sci. Technol. B 4, 931 (1986).
11. N. Newman, M. van Schilfgaarde, T. Kendelewicz, M. D. Williams, and W. E. Spicer, Phys. Rev. B 33, 1146 (1986).
12. S. Park, T. U. Kampen, D. R. T. Zahn, and W. Braun, Appl. Phys. Lett. 79, 4124 (2001).
13. I. Thurzo, T. U. Kampen, and D. R. T. Zahn, J. Vac. Sci. Technol. A 20, 1597 (2003).