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Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2278-2285

Characterization of aluminum oxyfluoride barrier in magnetic tunnel junctions

(3) Kim, D S a Yu, Y Y a Char, K a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DEPOSITION; ELECTRIC PROPERTIES; ELECTRODES; INSULATION; MAGNETORESISTANCE; MAGNETRON SPUTTERING; OXIDATION; PLASMAS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNEL BARRIERS; TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 4344618145 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1771826 Document Type: Article

Times cited : (16)

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