Tailormade SiC-based nanocables by the control of the methane concentration

Journal of Physics D: Applied Physics

Volumn 42, Issue 4, 2009, Pages

  Lopez Camacho E ^a   Fernandez M ^a   Gomez Aleixandre C ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON LAYER; CATALYTIC CHEMICAL VAPOUR DEPOSITION; EXPERIMENTAL CONDITIONS; FORMATION PROCESS; GROWTH MECHANISMS; INNER CORE; METHANE CONCENTRATIONS; NANOCABLE; NANOCABLES; REACTIVE SPECIES; SOLID-LIQUID-SOLID;

LIQUIDS; METHANATION; METHANE; SILICON CARBIDE;

AMORPHOUS CARBON;

EID: 67650077718     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/4/045302     Document Type: Article

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