Computational study on transamination of alkylamides with NH3 during metalorganic chemical vapor deposition of tantalum nitride

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3587-3591

  Won, Yong Sun ^a,b   Park, Sung Soo ^b   Kim, Young Seok ^a   Anderson, Timothy J ^a   McElwee White, Lisa ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Samsung Electro Mechanics   (South Korea)

^c University of Florida   (United States)

Author keywords

A1. DFT calculation; A1. Transamination; A3. Atomic layer epitaxy; A3. Chemical vapor deposition; B1. Tantalum nitride

Indexed keywords

A1. DFT CALCULATION; A1. TRANSAMINATION; A3. ATOMIC LAYER EPITAXY; A3. CHEMICAL VAPOR DEPOSITION; B1. TANTALUM NITRIDE;

ATOMS; CARBON FILMS; CRYSTAL GROWTH; LIGANDS; METAL RECOVERY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN REMOVAL; PROBABILITY DENSITY FUNCTION; PROTON TRANSFER; RATE CONSTANTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SULFUR COMPOUNDS; TANNING; TANTALUM; TANTALUM COMPOUNDS; TERNARY SYSTEMS; TITANIUM; VAPOR DEPOSITION; VAPORS;

TITANIUM NITRIDE;

EID: 67649841833     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.05.003     Document Type: Article

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