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Surface and Coatings Technology

Volumn 163-164, Issue , 2003, Pages 214-219

Diffusion barrier properties of metallorganic chemical vapor deposited NbNxOyCz films for Cu metallization

(7) Wu, C W a Gau, W C a Hu, J C a Chang, T C b Chen, C H c Chu, C J c Chen, L J a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c Namat Tech Co Ltd (Taiwan)

Author keywords

Amorphous NbNxOyCz films; Cu metallization; Diffusion barrier

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NIOBIUM COMPOUNDS;

DIFFUSION BARRIER PROPERTIES;

AMORPHOUS MATERIALS;

BARRIER; CHEMICAL VAPOR DEPOSITION; COATING; COMPOSITE; COPPER;

EID: 0037472561 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/S0257-8972(02)00608-4 Document Type: Article

Times cited : (4)

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