Design and modeling of ISFET for pH sensing

IEEE Region 10 Annual International Conference, Proceedings/TENCON

Volumn , Issue , 2007, Pages

  Kal, S ^a   Bhanu Priya, V ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

KETONES; SENSORS; STANDARDS;

BIOLOGICAL APPLICATIONS; DESIGN AND MODELING; FIELD EFFECTS; ISFET SENSORS; LOW-NOISE; P H VARIATIONS; PH SENSING; SIMULATED RESULTS; STANDARD EQUATIONS;

PH EFFECTS;

EID: 48649088173     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TENCON.2007.4428805     Document Type: Conference Paper

References (9)

1. Khanna V.K, Kumar A., Jain Y.K, Ahmad S., "Design and development of a novel high transconductance pH-ISFET based Glucose Sensor" vol 93, No. 2, Feb,2006.
2. Healy T. W. and White L. R., "Ionizable 'surface group models of aqueous interfaces," Adv. Colloid Interface Sci., vol. 9, pp. 303-345, 1978.
3. Fung C.D.,Cheung W.Peter, "A generalized theory of an Electrolyte-Insulator-semiconductor Field Effect Transistor", IEEE trans. vol. ED-32, NO.1,January,1986.
4. Bousse L., Bergveld P. and Rooij N.F., " operation of chemically sensitive field effect sensors as a function of the insulator electrolyte interface" IEEE trans. vol. ED-30 No. 10 October 1983.
5. Davis J. A., James R. 0., and Leckie J. 0., "Surface ionization and complexation at the oxide/water interface,"J. Colloid Interface Sci, vol. 63, pp. 480-499, Mar. 1978.
6. Yates D. E., Levine S. and Healy T. W., "Site-binding model of Peerthe electrical double layer at the oxide/water interface," J. Chem. SOCF. Trans., vol. 70, pp. 1807-1818, Nov. 1974.
7. Westall J. and Hohl H., "A comparison of electrostatic models for the oxide/solution interface," Adv. Colloid Interface Sci., vol. 12, pp. 265-294,1980.
8. Klaassen F.M, Graff H.C.de, "Compact transistor modelling for circuit design" Springer, Wien-N.Y, 1990.
9. M.SIU William and.Cobbold Richard S.C, "basic properties of the electrolyte-SiO2-Si system: Physical and theoretical Aspects" IEEE Trans. vol. ED-26, NO.11, November 1979.