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Volumn 30, Issue 6, 2009, Pages 626-628

Ultralow voltage crossbar nonvolatile memory based on energy-reversible NEM switches

Author keywords

Low voltage; Nanoelectromechanical systems (NEMS); Nonvolatile (NV) memory

Indexed keywords

BEAM BENDING; CELL SELECTION; CROSSBAR ARRAYS; DISPLACEMENT CURRENTS; ELASTIC POTENTIAL ENERGY; FEATURE SIZES; LOW VOLTAGE; NANO-ELECTROMECHANICAL; NANOELECTROMECHANICAL SYSTEMS (NEMS); NON-VOLATILE; NON-VOLATILE MEMORIES; NONVOLATILE (NV) MEMORY; NONVOLATILITY; NS SWITCHING; OPERATION VOLTAGE; SWITCHING ENERGY; SWITCHING SPEED; ULTRALOW VOLTAGE; WORKFUNCTION ENGINEERING;

EID: 67649365838     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2018289     Document Type: Article
Times cited : (40)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.