Future directions of non-volatile memory technologies

Materials Research Society Symposium Proceedings

Volumn 830, Issue , 2005, Pages 3-11

  Fazio, Albert ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERAS; CMOS INTEGRATED CIRCUITS; COMPUTER PROGRAMMING; DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; EXTRAPOLATION; LITHOGRAPHY; SEMICONDUCTING SILICON; SOLID ELECTROLYTES; SWITCHING; TRANSISTORS;

MOORE'S LAW; PLANAR TRANSISTORS; PROGRAMMING VOLTAGE; TUNNELING DIELECTRICS;

FLASH MEMORY;

EID: 20344377154     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)

1. Brown, W., Brewer, J., Nonvolatile Semiconductor Memory Technology A Comprehensive Guide to Understanding and Using NVSM Device, IEEE Press, New York
2. Kynett, V.N., Baker, A.; Fandrich, M.L.; Hoekstra, G.P.; Jungroth, O.; Kreifels, J.A.; Wells, S.; Winston, M.D.; "An In-System Reprogrammable 256K CMOS Flash Memory," Technical Digest IEEE International Solid State Circuits Conference, 1988, pp. 132-133.
3. She, M., King, T.J., Hu, C., Zhu, W., Luo, Z., Han, J.P., Ma, T.P.; "Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride," Semiconductor Device Research Symposium, 2001 International, 5-7 Dec. 2001. Pages:641 - 644
4. Pein, H.B., Plummer, J.D.; "Performance of the 3-D sidewall flash EPROM cell", Electron Devices Meeting, 1993. Technical Digest., International, 5-8 Dec. 1993, pp.11 -14
5. Naruke, K., Taguchi, S.; Wada, M.; "Stress Induced Leakage Current Limiting to Scale Down EEPROM Tunnel Oxide Thickness", 1988 IEDM Tech. Dig., pp. 424
6. Korotkov, A., Likharev, K.; "Resonant Fowler-Nordheim Tunneling through Layered Tunnel Barriers and its Possible Applications", 1999 IEDM Tech. Dig., pp. 223-226.
7. Likharev, K.K, "Riding the crest of a new wave in memory [NOVORAM]," Circuits and Devices Magazine, IEEE, Volume: 16, Issue: 4, July 2000, pp.16-21
8. Eitan, B.; Pavan, P.; Bloom, I.; Aloni, E.; Frommer, A.; Finzi, D.; "NROM: A novel localized trapping 2-bit nonvolatile memory cell," Electron Device Letters, IEEE, Volume: 21, Issue: 11, Nov. 2000, pp. 543 - 545
9. De Blauwe, J., "Nanocrystal nonvolatile memory devices. Nanotechnology," IEEE Transactions on, Volume: 1, Issue: 1, March 2002, pp. 72 - 77
10. Bauer, M., Alexis, R.; Atwood, G.; Baltar, B.; Fazio, A.; Frary, K.; Hensel, M.; Ishac, M.; Javanifard, J.; Landgraf, M.; Leak, D.; Loe, K.; Mills, D.; Ruby, P.; Rozman, R.; Sweha, S.; Talreja, S.; Wojciechowski, K.; "A Multilevel-Cell 32Mb Flash Memory," Technical Digest IEEE International Solid State Circuits Conference, 1995, pp. 132,133.
11. Tehrani, S., Slaughter, J., Deherrera, M., Engel, B., Rizzo, N., Salter, J., Durlam, M., Dave, R., Janesky, J., Butcher, B., Smith, K., Grynkewich, G., "Magnetoresistive Random Access Memory Using Magnetic Tunnel Junctions", Proceedings of the IEEE, Vol. 91, Issue 5, May 2003, pp. 703-714
12. Moise, T., et. al., "Demonstration of a 4Mb, High Density Ferroelectric Memory Embedded Within a 130nm, 5 LM Cu/FSG Logic Process", IEDM 2002, International, pp. 535-538
13. Lai, S., Lowrey, T., "OUM - A 180nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications", IEDM, Digest International, Dec. 2001.
14. Zhuang, W., Pan, W., Ulrich, B., Lee, J., Stecker, L., Burmaster, A., Evans, D., Hsu, S., Tajiri, M., Shimaoka, A., Inoue, K., Naka, T., Awaya, N., Sakiyama, A., Wang, Y., Liu, S., Wu, N., Ignatiev, A., "Novel Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM)", IEDM, Digest International, Dec. 2002, pp. 193-196
15. Rueckes, T., "Carbon Nanotubes-based Nonvolatile Random Access Memory for Molecular Computing", Science, 289, 2000, pp. 94
16. Liu, Z., Yasseri, A., Lindsey, J., Bocian, D., "Molecular Memories That Survive Silicon Device Processing and Real-World Operation", Science, Vol. 302, Nov. 2003, pp. 1543-1545
17. Vettiger, P., Cross, G., Despont, M., Drechsler, U., Durig, U., Gotsomann, B., Haberle, W., Lantz, M., Rothuizen, H., Stutz, R., Binnig, G., "The 'Millipeded' -Nanotechnology Entering Data Storage", Nanotechnology, IEEE Transactions on, Vol. 1, Issue 1, March 2002, pp. 39-55
18. Stikeman, A., "Polymer Memory, the plastic path to better storage", MIT Technology Review, Sept. 2002, pp. 31.
19. "An Introduction to Programmable Metallization Cell Memory Devices" at http://axontc.com