Field emission studies of Te nanorods grown on Si (111) substrate

Vacuum

Volumn 83, Issue 11, 2009, Pages 1307-1310

  Chavan, Padmakar G ^a   Patil, Sandip S ^a   More, Mahendra A ^a   Sen, Shashwati ^b   Sharma, Madhvi ^b   Muthe, K P ^b   Bhatta, Umananda M ^c   Satyam, P V ^c   Joag, Dilip S ^a  

^a UNIVERSITY OF PUNE   (India)

^b BHABHA ATOMIC RESEARCH CENTRE   (India)

^c INSTITUTE OF PHYSICS   (India)

Author keywords

Current stability; Field emission; Nanorods; Te

Indexed keywords

APPLIED FIELD; BACKGROUND PRESSURE; CLOSE PROXIMITY; CRYSTALLINE NATURE; CURRENT STABILITY; ELECTRONIC DEVICE; EMISSION CURRENT DENSITY; EMISSION CURRENT STABILITY; FIELD ENHANCEMENT FACTOR; HIGH-RESOLUTION TEM; NANOMETRIC; NANORODS GROWN; NEEDLE-LIKE; NONLINEAR BEHAVIOURS; PLANAR DIODE; SCANNING ELECTRON MICROSCOPES; SELECTED AREA ELECTRON DIFFRACTION; SI(111) SUBSTRATE; SILICON (111) SUBSTRATES; TE; TEM IMAGES; TRANSMISSION ELECTRON MICROSCOPE;

ELECTRONS; FIELD EMISSION; MICROSCOPES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TELLURIUM; TELLURIUM COMPOUNDS; THERMAL EVAPORATION; TRANSMISSION ELECTRON MICROSCOPY;

NANORODS;

EID: 67649336412     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.04.042     Document Type: Article

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