Synthesis and characterization of indium nitride nanowires by plasma-assisted chemical vapor deposition

Materials Letters

Volumn 63, Issue 21, 2009, Pages 1855-1858

  Chang, Yi Kuei ^a   Hong, Franklin Chau Nan ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Chemical vapor deposition; Crystal growth; Nanomaterials; Semiconductors

Indexed keywords

GROWTH DIRECTIONS; HIGH QUALITY; HIGH TEMPERATURE FURNACES; INDIUM METAL; INDIUM NITRIDE; INN NANOWIRES; NANOMATERIALS; PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; PROCESS TEMPERATURE; PROCESS WINDOW; RAMAN SPECTRA; REACTIVE NITROGEN; SEMICONDUCTORS; SI SUBSTRATES; SINGLE CRYSTALLITES; SYNTHESIS AND CHARACTERIZATION; WURTZITE STRUCTURE;

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC WIRE; GRAIN BOUNDARIES; INDIUM; NANOSTRUCTURED MATERIALS; NANOWIRES; NITRIDES; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; VAPORS; ZINC SULFIDE;

PLASMA DIAGNOSTICS;

EID: 67649321083     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2009.05.072     Document Type: Article

References (18)

1. Mohammad S.N., and Morkoc H. Prog. Quant. Electron. 20 (1996) 361-525
2. Chin V.W.L., Tansley T.L., and Osotchan T. J Appl Phys 75 (1994) 7365-7372
3. Foutz B.E., O Leary S.K., Shur M.S., and Easrman L.F. J Appl Phys 85 (1999) 7727-7734
4. Liang C.H., Chen L.C., Hwang J.S., Chen K.H., Hung Y.T., and Chen Y.F. Appl Phys Lett 81 (2002) 22-24
5. Xu H.Y., Liu Z., Zhang X.T., and Hark S.K. Appl Phys Lett 90 (2007) 113105
6. Chen H.Y., Shen C.H., Lin H.W., Chen C.H., Wu C.Y., Gwo S., et al. Thin Solid Films 515 (2006) 961-966
7. Shi S.C., Chen C.F., Hsu G.M., Hwang J.S., Chattopadhyay S., Lan Z.H., et al. Appl Phys Lett 87 (2005) 203103
8. Sardar K., Deepark F.L., Govindaraj A., Seikh M.M., and Rao C.N.R. Small 1 (2005) 91-94
9. Zhang J., Zhang L., Peng X., and Wang X. J Mater Chem 12 (2002) 802-804
10. Cheng G., Stern E., Turner-Evans D., and Reed M.A. Appl Phys Lett 90 (2005) 253013
11. Cai Z., Garzon S., Chandreshekhar M.V.S., Webb R.A., and Koley G. J Electron Mater 37 (2008) 585-592
12. Park H.J., Kryliouk O., Anderson T., Khokhlov D., and Burbaev T. Physica E 37 (2007) 142-147
13. Chao C.K., Chang H.S., Hsu T.M., Hsiao C.N., Kei C.C., Kuo S., et al. Nanotechnology 17 (2006) 3930-3932
14. Stoica T., Meijers R., Calarco R., Richter T., and Lüth H. J Cryst Growth 290 (2006) 241-247
15. Hao Y., Meng G., Wang Z.L., Ye C., and Zhang L. Nano Lett 6 (2006) 1650-1655
16. Biswas S., Kar S., Ghoshal T., Ashok V.D., Chaskrabarti S., and Chaudhuri S. MRS bull 42 (2007) 428-436
17. Davydov V.Y.u., Emtsev V.V., Goncharuk I.N., Smirnov A.N., Petrikov V.D., Mamutin V.V., et al. Appl Phys Lett 75 (1999) 3297-3299
18. Dyck J.S., Kim K., Limpijumnong S., Lambrecht W.R.L., Kash K., and Angus J.C. Solid State Commun 114 (2000) 355-360