Small signal parameters extraction for silicon MOS transistors

2000 30th European Microwave Conference, EuMC 2000

Volumn , Issue , 2000, Pages

  Bracale, A ^a,b   Pasquet, D ^a   Gautier, J L ^a   Ferlet, V ^b   Fel, N ^b   Pelloie, J L ^c  

^a ENSEA   (France)

^b CEA DIF   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; FIELD EFFECT TRANSISTORS; SCATTERING PARAMETERS;

EXTRACTION PROCEDURE; EXTRINSIC PARAMETER; MOS-FET; S-PARAMETERS MEASUREMENT; SMALL SIGNAL PARAMETERS; SOI SUBSTRATES;

SEMICONDUCTING SILICON;

EID: 84897498773     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2000.338657     Document Type: Conference Paper

References (8)

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8. Y. P. Tsividis. Operation and modeling of the MOS transistor. Mc Graw-Hill series in Electrical engineering. 1987.