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1
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30344458172
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Beyond G-Band: A 235 GHz InP MMIC Amplifier
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accepted for publication in Dec
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D. Dawson, L. Samoska, A.K. Fung, K. Lee, R. Lai, R. Grundbacher, Po-Hsin Liu, and Rohit Raja, "Beyond G-Band: A 235 GHz InP MMIC Amplifier," IEEE Microwave and Wireless Components Letters, accepted for publication in Dec. 2005.
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(2005)
IEEE Microwave and Wireless Components Letters
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Dawson, D.1
Samoska, L.2
Fung, A.K.3
Lee, K.4
Lai, R.5
Grundbacher, R.6
Liu, P.7
Raja, R.8
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2
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85136823342
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On-Wafer Testing of Circuits Through 220 GHz
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Ultrafasl Optics and Electronics Conference, Snowmass, CO, April
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T. Gaier, L. Samoska, C. Oleson, G. Boll, "On-Wafer Testing of Circuits Through 220 GHz," Ultrafasl Optics and Electronics Conference, Snowmass, CO, April, 1999. OSA Trends in Optics and Photonics Series Vol. 28, pp. 20-26.
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(1999)
OSA Trends in Optics and Photonics Series
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Gaier, T.1
Samoska, L.2
Oleson, C.3
Boll, G.4
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3
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2442482780
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547-GHz ft In0.7Ga0.3As-In0.52Al0.48As HEMTs With Reduced Source and Drain Resistance
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May
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K. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Matsui, T. Mimura, and S. Hiyamizu, "547-GHz ft In0.7Ga0.3As-In0.52Al0.48As HEMTs With Reduced Source and Drain Resistance," IEEE Electron Device Letters, vol. 25, no. 5, pp. 241-243, May 2004.
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(2004)
IEEE Electron Device Letters
, vol.25
, Issue.5
, pp. 241-243
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Shinohara, K.1
Yamashita, Y.2
Endoh, A.3
Watanabe, I.4
Hikosaka, K.5
Matsui, T.6
Mimura, T.7
Hiyamizu, S.8
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4
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12444326284
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InGaAs-InP DHBTs for Increased Digital IC Bandwidth Having a 391-GHz ft and 505-GHz fmax
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Jan
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Z. Griffith, M. Dahlstrom, M. J. W. Rodwell, X,-M. Fang, D. Lubyshev, Y. Wu, J. M. Fastenau, and W. K. Liu, "InGaAs-InP DHBTs for Increased Digital IC Bandwidth Having a 391-GHz ft and 505-GHz fmax," IEEE Electron Device Letters, vol. 26, no. 1, pp. 11-13, Jan. 2005.
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(2005)
IEEE Electron Device Letters
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, Issue.1
, pp. 11-13
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Griffith, Z.1
Dahlstrom, M.2
Rodwell, M.J.W.3
Fang, X.-M.4
Lubyshev, D.5
Wu, Y.6
Fastenau, J.M.7
Liu, W.K.8
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5
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33646266297
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Vertical Scaling of Planarized InP/InGaAs Heterojunction Bipolar Transistors with ft > 350 GHz and fmax > 500 GHz
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Glasgow, Scotland, May
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D. Sawdai, P.C. Chang, V. Gambin, X. Zeng, J. Wang, M. Barsky, B. Chan, B. Oyama, A. Gutierrez-Aitken, and A. Oki, "Vertical Scaling of Planarized InP/InGaAs Heterojunction Bipolar Transistors with ft > 350 GHz and fmax > 500 GHz," International Conference on InP and Related Materials, Glasgow, Scotland, May, 2005, pp. 335-338.
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(2005)
International Conference on InP and Related Materials
, pp. 335-338
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Sawdai, D.1
Chang, P.C.2
Gambin, V.3
Zeng, X.4
Wang, J.5
Barsky, M.6
Chan, B.7
Oyama, B.8
Gutierrez-Aitken, A.9
Oki, A.10
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6
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29144531733
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First Demonstration of Sub-0.25 μm-Width Emitter InP-DHBTs with >400 GHz ft and >400 GHz fmax
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San Francisco, CA, Dec
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T. Hussain, Y. Royter, D. Hitko, M. Montes, M. Madhav, I. Milosavljevic, R. Rajavel, S. Thomas, M. Antcliffe, A. Arthur, Y. Boegeman, M. Sokolich, "First Demonstration of Sub-0.25 μm-Width Emitter InP-DHBTs with >400 GHz ft and >400 GHz fmax," International Electron Devices Meeting, San Francisco, CA, Dec., 2004. pp. 347-350.
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(2004)
International Electron Devices Meeting
, pp. 347-350
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Hussain, T.1
Royter, Y.2
Hitko, D.3
Montes, M.4
Madhav, M.5
Milosavljevic, I.6
Rajavel, R.7
Thomas, S.8
Antcliffe, M.9
Arthur, A.10
Boegeman, Y.11
Sokolich, M.12
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7
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3943092602
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Self-Aligned InP DHBT with ft and fmax Over 300 GHz in a New Manufacturable Technology
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Aug
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G. He, J. Howard, M. Le, P. Partyka, B. Li, G. Kim, R. Hess, R. Bryie, R. Lee, S. Rustomji, J. Pepper, M. Kail, M. Helix, R.B. Elder, D.S. Jansen, N.B. Harff, J.F. Prairie, E.S. Daniel, and B.K. Gilbert, "Self-Aligned InP DHBT with ft and fmax Over 300 GHz in a New Manufacturable Technology," IEEE Electron Device Letters, vol. 25, no. 8, pp. 520-522, Aug. 2004.
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(2004)
IEEE Electron Device Letters
, vol.25
, Issue.8
, pp. 520-522
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He, G.1
Howard, J.2
Le, M.3
Partyka, P.4
Li, B.5
Kim, G.6
Hess, R.7
Bryie, R.8
Lee, R.9
Rustomji, S.10
Pepper, J.11
Kail, M.12
Helix, M.13
Elder, R.B.14
Jansen, D.S.15
Harff, N.B.16
Prairie, J.F.17
Daniel, E.S.18
Gilbert, B.K.19
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8
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20844433843
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Experimental Demonstration of Pseudomorphic Heteroj unction Bipolar Transistors with Cutoff Frequencies Above 600 GHz
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152101-3, April
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W. Hafez and M. Feng, "Experimental Demonstration of Pseudomorphic Heteroj unction Bipolar Transistors with Cutoff Frequencies Above 600 GHz," Applied Physics Letters, vol. 86, no. 15, pp. 152101-1 - 152101-3, April. 2005.
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(2005)
Applied Physics Letters
, vol.86
, Issue.15
, pp. 152101-152101
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Hafez, W.1
Feng, M.2
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9
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10444228550
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A 220 GHz Metamorphic HEMT Amplifier MMIC
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A. Tessmann, A. Leuther, H. Massler, M. Kurl, C. Schwoerer, M. Schlechtweg, and G. Weimann, "A 220 GHz Metamorphic HEMT Amplifier MMIC," 2004 IEEE Compound Semiconductor Integrated Circuit Digest, pp. 297-300.
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2004 IEEE Compound Semiconductor Integrated Circuit Digest
, pp. 297-300
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Tessmann, A.1
Leuther, A.2
Massler, H.3
Kurl, M.4
Schwoerer, C.5
Schlechtweg, M.6
Weimann, G.7
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