Transition metal oxides as charge injecting layer for admittance spectroscopy

Applied Physics Letters

Volumn 92, Issue 21, 2008, Pages

  Hoping, M ^a   Schildknecht, C ^b   Gargouri, H ^a   Riedl, T ^a   Tilgner, M ^a   Johannes, H H ^a   Kowalsky, W ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b BASF SE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHARGE INJECTION; EMISSION SPECTROSCOPY; MOLECULAR ORBITALS; OHMIC CONTACTS;

ADMITTANCE SPECTROSCOPY; TIME-OF-FLIGHT TECHNIQUES; TRANSITION METAL OXIDES; TUNGSTEN OXIDE;

TRANSITION METAL COMPOUNDS;

EID: 44449093199     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936301     Document Type: Article

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