Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices

Organic Electronics

Volumn 9, Issue 5, 2008, Pages 575-581

  Chan, Calvin K ^a   Zhao, Wei ^a   Barlow, Stephen ^b   Marder, Seth ^b   Kahn, Antoine ^a  

^a Princeton University   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Metallocene; n Type doping; Organic semiconductor; Photoemission spectroscopy; Phthalocyanine

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON AFFINITY; FIELD EFFECT TRANSISTORS; ORGANIC POLYMERS; ORGANOMETALLICS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DOPING;

BUILT-IN VOLTAGE; CAPACITANCE VOLTAGE MEASUREMENTS; COPPER PHTHALOCYANINE; CURRENT-VOLTAGE MEASUREMENTS; ENHANCED CONDUCTIVITY; N-TYPE DOPING; ORGANIC ELECTRONIC MATERIALS; PHTHALOCYANINE;

ELECTRIC RECTIFIERS;

EID: 49249112449     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.03.003     Document Type: Article

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