Zno nanowire field-effect transistors with floating gate nodes of au nanoparticles

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 5, 2009, Pages 3256-3260

  Yeom, Donghyuk ^a   Kang, Jeongmin ^a   Yoon, Changjoon ^a   Park, Byoungjun ^a   Jeong, Dong Young ^a   Koh, Eul Kwan ^b   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

Au; FET.; Memory; Nanoparticles; Nanowires; ZnO

Indexed keywords

A-THERMAL; AU; AU NANOPARTICLE; AU THIN FILMS; CHARGE STORAGE CHARACTERISTIC; CLOCKWISE HYSTERESIS LOOP; CONTROL GATES; FET.; FLOATING GATE NODES; GATE VOLTAGES; IN-BETWEEN; MEMORY; THERMAL-ANNEALING; THRESHOLD VOLTAGE SHIFTS; TOP-GATE; ZNO; ZNO NANOWIRES;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; HYSTERESIS; MESFET DEVICES; NANOPARTICLES; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; THRESHOLD VOLTAGE; TUNNELING (EXCAVATION); VANADIUM; ZINC OXIDE;

GOLD;

EID: 67649171587     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.020     Document Type: Article

References (20)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
2. S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett.69, 1232 (1996).
3. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Elec. Dev. 49, 1606 (2002).
4. C. C. Wang, J. Y. Tseng, T. B. Wu, L. J. Wu, C. S. Liang, and J. M. Wu, J. Appl. Phys. 99, 026102 (2006).
5. C. Lee, A. Gorur-Seetharam, and E. C. Kan, IEEE IEDM Tech. Dig.03, 557 (2003).
6. T. Bryllert, L. Wemersson, T. Lowgren, and L. Samuelson, Nanotechnology 17, S227 (2006).
7. H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, Adv. Mater 14,158 (2002).
8. W. U. Wang, C. Chen, K-H. Lin, Y. Fang, and C. M. Lieber, PNAS 102, 3208 (2005).
9. M. C. McAlpine, R. S. Friedman, and C. M. Lieber, Proc. of the IEEE 93, 1357 (2005).
10. Z. Fan, D. Wang, P. Chang, W. Tseng, and I. G. Lu, Appl. Phys. Lett. 85, 5923 (2004).
11. S. Y. Li, C. Y. Lee, P. Lin, and T. Y. J. Tseng, Vac. Sd. Technol.B 24, 147 (2006).
12. Q. H. Li, T. Gao, Y. G. Wang, and T. H. Wang, Appl. Phys. Lett. 86,123117 (2005).
13. C. Li, I. Ly, B. Lei, W. Fan, D. Zhang, J. Han, M. Meyyappan, M. Thompson, and C. Zhou, J. Phys. Chem. B 108, 9646 (2004).
14. C. Li, B. Lei, W. Fan, D. Zhang, M. Meyyappan, and C. Zhou, J. Nanosci. Nanotechnol. 7, 138 (2007).
15. Q. Li, X. Zhu, H. D. Xiong, S.-M. Koo, D. E. Ioannou, J. I. Kopanski, J. S. Suehle, and C. A. Richter, Nanotechnology 18, 235204 (2007).
16. R. J. Collins and D. G. Thomas, Phys. Rev. 122, 388 (1958).
17. Y. Takahashi, M. Kanamori, A. Kondoh, H. Minoura, and Y. Ohya, Jpn. J. Appl. Phys. 33, 6611 (1994).
18. P.Normand, E. Kapetanakis, P. Dimitrakis, D. Tsoukalas, K. Beltsios, N. Cherkashin, C. Bonafos, G. Benassayag, H. Coffin, A. Claverie, V. Soncini, A. Agarwal, and M. Ameen, Appl. Phys. Lett. 83, 168 (2003).
19. H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, Nano Lett.4, 1247 (2004).
20. H. Kim, K. Cho, D.-W. Kim, H.-R. Lee, and S. Kim, Appl. Phys. Lett. 89, 173107 (2006).