Growth and structural characteristics of (Ga,Al)As Bragg reflectors grown by MBE on nominal and vicinal (1 1 1)B GaAs substrates

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 178-182

  Guerret Piécourt, Christelle ^a   Fontaine, Chantal ^a   Ponchet, Anne ^b  

^a LAAS CNRS   (France)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MULTILAYERS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY;

BRAGG REFLECTORS;

SEMICONDUCTOR GROWTH;

EID: 0344614027     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01313-X     Document Type: Article

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