Feasibility of III-V on-silicon strain relaxed substrates

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 157-166

  Kostrzewa, M ^a,b   Grenet, G ^a   Regreny, P ^a   Leclercq, J L ^a   Perreau, P ^b   Jalaguier, E ^b   Di Cioccio, L ^b   Hollinger, G ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA LETI   (France)

Author keywords

A1. Substrates; A3. Molecular beam epitaxy; B1. Glasses; B2. Semiconducting III V materials

Indexed keywords

BOROPHOSPHATE GLASS; BOROSILICATE GLASS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SILICON WAFERS; STRAIN RATE; SUBSTRATES; VISCOSITY;

ELASTIC RELAXATION; GLASSES; SEED LAYERS; SEMICONDUCTING III-IV MATERIALS; WAFER BONDING;

SEMICONDUCTING SILICON;

EID: 15844380942     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.080     Document Type: Conference Paper

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