Crystallographic anisotropy of growth and etch rates of CVD diamond

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 713-717

  Wolfer, Marco ^a   Biener, Jürgen ^b   El dasher, Bassem S ^b   Biener, Monika M ^b   Hamza, Alex V ^b   Kriele, Armin ^a   Wild, Christoph ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Diamond CVD; Etching; Homoepitaxy; Orientation

Indexed keywords

ATOMIC SCALE; CRYSTALLOGRAPHIC ANISOTROPY; CVD DIAMOND; DIAMOND CVD; DIAMOND GROWTH; ELECTRON BACK SCATTER DIFFRACTION; ETCH PROCESS; ETCH RATES; EXPERIMENTAL DATA; HOMOEPITAXIAL DIAMOND; HOMOEPITAXY; METHANE CONCENTRATIONS; MICROWAVE PLASMA CVD; ORIENTATION; ORIENTATION DEPENDENT; OXYGEN PLASMAS; POLYCRYSTALLINE CVD DIAMOND; POLYCRYSTALLINE DIAMONDS; RANDOM GRAINS; THEORETICAL MODELS; UNDERLYING MECHANISM; WHITE-LIGHT INTERFEROMETRY;

ATOMIC FORCE MICROSCOPY; ATOMS; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIAMONDS; ELECTRON DIFFRACTION; ETCHING; GRAIN BOUNDARIES; GRAIN GROWTH; LIGHT; METHANATION; METHANE; MICROWAVES; OXYGEN; PHOTORESISTS; PLASMA DIAGNOSTICS; PLASMAS; SINGLE CRYSTALS;

CRYSTAL ORIENTATION;

EID: 67349273973     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.11.034     Document Type: Article

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