Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability

Microelectronics Reliability

Volumn 49, Issue 6, 2009, Pages 642-649

  Bansal, Aditya ^a   Rao, Rahul ^a   Kim, Jae Joon ^a   Zafar, Sufi ^a   Stathis, James H ^a   Chuang, Ching Te ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED EFFECTS; DEVICE DEGRADATIONS; FAILURE PROBABILITIES; IN CELLS; LONG-TERM STABILITIES; MONTE-CARLO SIMULATIONS; MOSFETS; NOISE MARGINS; OPTIMAL POWER; POSITIVE BIAS TEMPERATURE INSTABILITIES; PROCESS VARIATIONS; READ STABILITIES; RELATIVE STRENGTHS; SHORT-TERM STABILITIES; SIX SIGMAS; SRAM CELLS; STATIC NOISE; STATIC RANDOM ACCESS MEMORIES; WORST CASE;

DEGRADATION; RAILROAD PLANT AND STRUCTURES; STATIC RANDOM ACCESS STORAGE; THERMODYNAMIC STABILITY;

NEGATIVE TEMPERATURE COEFFICIENT;

EID: 67349249401     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.03.016     Document Type: Article

References (13)

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